176-layer

SK hynix has announced their latest generation of 3D NAND, now featuring 176 layers of charge trap flash memory cells. SK hynix is the second NAND manufacturer to reach this layer count, following Micron's announcement that their 176L NAND was starting to ship in Crucial-branded products. This is SK hynix's third generation to feature their Periphery under Cell (PUC) design to reduce die size by placing peripheral logic under the memory cell array, similar to Intel and Micron's CMOS Under Array design. (SK hynix refers to the combination of this die layout and their charge trap flash cells as "4D NAND".) Changes with this generation include a 35% increase in bit productivity (only slightly less than theoretically possible with the jump from 128 to 176...

Micron Announces 176-layer 3D NAND

Just in time for Flash Memory Summit, Micron is announcing their fifth generation of 3D NAND flash memory, with a record-breaking 176 layers. The new 176L flash is their...

29 by Billy Tallis on 11/9/2020

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